N-channel MOSFET

Features

■ High ruggedness

BVDSS : 500V

■ RDS(ON) (Max 3150mΩ)@VGS=10V

ID

: 3A

■ Fast reverse recovery body diode

RDS(ON) : 2.70ohm

■ Improved dv/dt Capability

■ Avalanche Tested